Semiconductor device, test method, and system including the same

ABSTRACT

A semiconductor device, a test method, and a system including the same are disclosed, which may relate to a technology for testing open and short states of a pad of a semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of U.S. patent applicationSer. No. 15/696,865, filed on Sep. 6, 2017, and claims priority basedupon Korean patent application No. 10-2017-0064059, filed on May 24,2017, the disclosure of which is hereby incorporated in its entirety byreference herein.

BACKGROUND 1. Technical Field

Embodiments of the present disclosure may generally relate to asemiconductor device, a test method, and a system including the same,and more particularly to a technology for testing open and short(open/short) states of a pad of a semiconductor device.

2. Related Art

Semiconductor devices such as Dynamic Random Access Memory (DRAM) havebeen changed to meet various demands. A representative example of astructural change from among such changes of semiconductor devices is amulti-chip package (MCP).

In order to meet such demands, various technologies may be used. Onesuch technology that is used is multi-chip package (MCP) technology. Amulti-chip package (MCP) is a package chip composed of a plurality ofchips.

Semiconductor device packaging technologies have been rapidly developedto be manufactured with smaller sizes and larger capacitance. In recenttimes, with the rapid development of smaller-sized andlarger-capacitance semiconductor devices, various technologies forstacked semiconductor packages configured to satisfy populationefficiency have been intensively researched and developed.

When manufacturing a semiconductor package, an open/short (OS) test fortesting whether an input and output (input/output) (I/O) pin(hereinafter referred to as a pad) of signals for use in one or moresemiconductor devices contained in the semiconductor package is normallycoupled to an internal circuit using a probe test device is carried out.In addition, when a defective cell is detected after completion of atest (hereinafter referred to as a functional test) for testing whetherthe semiconductor device normally operates using a package test device,a repair process for replacing the defective cell with a redundancy cellis needed.

The open/short (OS) test may test detect whether an I/O pad of asemiconductor device contained in the semiconductor package is normallycoupled to a ball of the semiconductor package. The open/short (OS) testmay test whether input signals of the semiconductor package are normallyapplied to the semiconductor device or the signals applied to thesemiconductor device can be normally output to the outside of thesemiconductor package.

Generally, the reason why the open/short (OS) test is performed prior toexecution of the package test is that the functional test result can betrusted and memory cells can be repaired only when there isn't anopen/short (OS) test failure. In other words, if normal connection ofthe I/O pad of the semiconductor device is confirmed through theopen/short (OS) test, a defective cell must be detected and repaired onthe condition of such confirmation, such that the correspondingsemiconductor device having the defective cell can be repaired.

SUMMARY

In accordance with an embodiment of the present disclosure, asemiconductor device may be provided. The semiconductor device mayinclude an enable controller configured to generate an enable signal fortesting pad connectivity and an internal test enable signal based on aboot-up enable signal. The semiconductor device may include an inputcircuit configured to generate a plurality of input signals by bufferinga plurality of command addresses during activation of the enable signal.The semiconductor device may include an output circuit configured toselect any one of internal data and the plurality of input signalsreceived from the input circuit during activation of the enable signal,and output the selected one to an outside of the semiconductor device.

In accordance with an embodiment of the present disclosure, asemiconductor device may be provided. The semiconductor device mayinclude an enable controller configured to generate an enable signal fortesting pad connectivity based on a boot-up enable signal. Thesemiconductor device may include an input circuit configured to generatea plurality of input signals by buffering a plurality of commandaddresses and a clock signal during activation of the enable signal. Thesemiconductor device may include an output circuit configured toselectively output the plurality of input signals received from theinput circuit to an outside of the semiconductor device based on aselection signal during activation of the enable signal.

In accordance with an embodiment of the present disclosure, a system maybe provided. The system may include a pad to which a plurality ofcommand addresses and data are input and output. The system may includea semiconductor device configured to simultaneously receive theplurality of command addresses through the pad to generate a pluralityof input signals, and output the data by combining the plurality ofinput signals during activation of an enable signal. The number ofsignals output to the pad may be selectively changed based on aninternal test enable signal for testing pad connectivity.

In accordance with an embodiment of the present disclosure, a method fortesting a semiconductor may be provided. The method may includegenerating an enable signal for testing pad connectivity based on aboot-up enable signal. The method may include generating a plurality ofinput signals by buffering a plurality of signals applied to an inputpad circuit during activation of the enable signal. The method mayinclude combining the plurality of input signals during activation of achip selection signal and the enable signal. The method may includeoutputting a result of the combination to an output pad circuit.

In accordance with an embodiment of the present disclosure, a system maybe provided. The system may include an enable controller configured togenerate an enable signal for testing pad connectivity and an internaltest enable signal based on a boot-up enable signal. The system mayinclude an input circuit configured to generate a plurality of inputsignals by buffering a plurality of command addresses during activationof the enable signal. The system may include an output circuitconfigured to select any one of internal data and the plurality of inputsignals received from the input circuit during activation of the enablesignal, and output the selected one to a test device.

In accordance with an embodiment of the present disclosure, a system maybe provided. The system may include an enable controller configured togenerate an enable signal for testing pad connectivity based on aboot-up enable signal. The system may include an input circuitconfigured to generate a plurality of input signals by buffering aplurality of command addresses and a clock signal during activation ofthe enable signal. The system may include an output circuit configuredto selectively output the plurality of input signals received from theinput circuit to a test device based on a selection signal duringactivation of the enable signal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

FIG. 2 is a detailed circuit diagram illustrating a representation of anexample of the system including the semiconductor device illustrated inFIG. 1.

FIG. 3 is a circuit diagram illustrating a representation of an enablecontroller illustrated in FIG. 2.

FIG. 4 is a circuit diagram illustrating a buffer circuit illustrated inFIG. 2.

FIG. 5 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

FIG. 6 is a circuit diagram illustrating a representation of an exampleof the system including the semiconductor device illustrated in FIG. 5.

FIG. 7 is a circuit diagram illustrating a representation of an enablecontroller illustrated in FIG. 6.

FIG. 8 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

FIG. 9 is a circuit diagram illustrating a representation of an exampleof the system including the semiconductor device according to anembodiment of the present disclosure.

FIG. 10 is a timing diagram illustrating operations of a semiconductordevice according to embodiments of the present disclosure.

DETAILED DESCRIPTION

Reference will now be made to embodiments of the present disclosure,examples of which are illustrated in the accompanying drawings. Whereverpossible, the same reference numbers are used throughout the drawings torefer to the same or like portions.

Various embodiments of the present disclosure may be directed toproviding a semiconductor device, a test method, and a system includingthe same that substantially obviate one or more problems due tolimitations and disadvantages of the related art.

An embodiment of the present disclosure may generally relate to atechnology for testing the open/short (OS) test at a specific time pointwithout using a test pad.

Further, the logic levels of the signals may be different from or theopposite of those described. For example, a signal described as having alogic “high” level may alternatively have a logic “low” level, and asignal described as having a logic “low” level may alternatively have alogic “high” level.

For reference, an embodiment including additional components may beprovided. Furthermore, an active high or active low configurationindicating an active state of a signal or circuit may be changeddepending on embodiments. Furthermore, the configuration of a transistorrequired for implementing the same function may be modified. That is,the configuration of the PMOS transistor and the configuration of theNMOS transistor may be replaced with each other, depending on a specificsituation. If necessary, various transistors may be applied to implementthe configurations.

For reference, an embodiment including additional components may beprovided. Furthermore, an active high or active low configurationindicating an active state of a signal or circuit may be changeddepending on embodiments. Furthermore, the configuration of a logic gateor logic gates required for implementing the same function or operationmay be modified. That is, the logic gate configuration of one type ofoperation and another logic gate configuration for the same type ofoperation may be replaced with each other, depending on a specificsituation. If necessary, various logic gates may be applied to implementthe configurations.

FIG. 1 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

Referring to FIG. 1, an open and short (open/short) (OS) test systemhaving a semiconductor device according to an embodiment of the presentdisclosure may include a semiconductor device 100 and a test device 200.

In this case, the semiconductor device 100 may include an enablecontroller 110, an input circuit 120, and an output circuit 130.

The enable controller 110 may generate an enable signal EN for testingthe semiconductor device 100. The enable controller 110 may generate aninternal test enable signal ITEN and an enable signal EN in response toa test enable signal TEN, a boot-up enable signal BEN, and a test modesignal TM. Here, the test mode signal TM may be activated by a testcommand received from an external controller (not illustrated) during atest mode. The boot-up enable signal BEN will hereinafter be describedwith reference to FIG. 2.

For example, the internal test enable signal ITEN may be a controlsignal for testing connectivity of each pad. That is, the internal testenable signal ITEN may be a control signal for testing an open or shortstate of each pad. The internal test enable signal ITEN may be activatedonly during a connectivity test operation, and may not affect an activesignal, a precharge signal, a read signal, a write signal, or the liketo control a core region of the semiconductor device 100.

The input circuit 120 may receive a command address CA from the testdevice 200, and may output the received command address CA to thesemiconductor device 100. The input circuit 120 may generate a pluralityof input signals MT in response to the internal test enable signal ITEN,the enable signal EN, and the plurality of command addresses CA receivedfrom the test device 200.

The output circuit 130 may select any one of the input signal MTreceived from the input circuit 120 and internal data MREG of thesemiconductor device 100, and may output the selected one to the testdevice 200 or an outside which is physically located outside thesemiconductor device 100. That is, the output circuit 130 may outputinternal data MREG as data DQ during a normal operation, and may outputthe input signal MT received from the input circuit 120 as data DQduring a test operation. For example, the internal data MREG may referto read data or write data received from a memory cell (not illustrated)of the semiconductor device 100 during the normal operation. Anembodiment of the present disclosure will disclose that the internaldata MREG is read data of a memory cell (not illustrated) on theassumption that the normal operation is a read mode.

The output circuit 130 may select any one of the internal test enablesignal ITEN, the plurality of input signals MT, and the internal dataMREG of the semiconductor device 100, thereby generating plural data DQ.The output circuit 130 may output data DQ to the test device 200 whenthe chip selection signal CS and the enable signal EN are activated.Here, the data DQ may be output to the test device 200 in parallel.

The input circuit 120 and the output circuit 130 may be configured toinput and output (input/output) the test signal to test connectivitybetween each pad of the test device and each pad of the semiconductordevice 100. That is, the semiconductor device 100 may receive a testsignal from the test device 200 through the input circuit 120.

In order to test a pad connectivity state of the semiconductor device100, the test device 200 may generate a command address CA and a chipselection signal CS, may output the command address CA and the chipselection signal CS to the semiconductor device 100, and may receivedata DQ from the semiconductor device 100. The test device 200 mayanalyze the signals received from the output circuit 130 of thesemiconductor device 100, and may test whether the internal pad of thesemiconductor device 100 is normally coupled to the internal circuit ofthe semiconductor device 100.

FIG. 2 is a circuit diagram illustrating a representation of an exampleof the system including the semiconductor device illustrated in FIG. 1.

Referring to FIG. 2, the enable controller 110 may generate an enablesignal EN for activating the test operation for pad connectivity of thesemiconductor device 100. The enable controller 110 may generate aninternal test enable signal ITEN and an enable signal EN according to atest enable signal TEN when the test device 200 is coupled to a pad P2.However, if the test device 200 is not coupled to the pad P2 accordingto the specifications of the semiconductor device 100, the enablecontroller 110 may generate the internal test enable signal ITEN and theenable signal EN according to the test mode signal TM and the boot-upenable signal BEN.

The input circuit 120 may include pads P1 and P2, an input pad circuit121, a buffer circuit 122, and an input combination circuit 123.

The pad P1 may receive a chip selection signal CS. The chip selectionsignal CS may be received from a chip selection pin 220 of the testdevice 200. The pad P2 may receive the test enable signal TEN.

The input pad circuit 121 may include a plurality of input pads IP1˜IP6configured to transmit a plurality of command addresses CA1˜CA6 receivedfrom the test device 200 to the buffer circuit 122. For example, theplurality of command addresses CA1˜CA6 may be received from the commandaddress pin 230 of the test device 200. The plurality of commandaddresses CA1˜CA6 may be input to the semiconductor device 100 inparallel.

The buffer circuit 122 may buffer the plurality of command addressesCA1˜CA6 received from the input pad circuit 121. The buffer circuit 122may include a plurality of buffers B1˜B6 configured to output aplurality of buffer signals CA1_B˜CA6_B by buffering the plurality ofcommand addresses CA1˜CA6. If the enable signal EN is activated, theplurality of buffers B1˜B6 may receive the plurality of commandaddresses CA1˜CA6 from the input pad circuit 121. For example, theenable signal EN may activate the plurality of buffers B1˜B6.

The last buffer B6 from among the plurality of buffers B1˜B6 may beselectively activated according to the test mode signal TM and theinternal test enable signal ITEN. For example, if both the test modesignal TM and the internal test enable signal ITEN are enabled, thebuffer B6 is activated to output the buffer signal CA6_B.

During the test operation based on the specification of thesemiconductor device, one command address (e.g., command address CA6)from among the plurality of command addresses CA1˜CA6 may not be used.In this case, the buffer B6 configured to buffer the command address CA6is not used, such that the buffer signal (CA6_B) may be fixed to adeactivation state through the test mode signal TM and the internal testenable signal ITEN.

The input combination circuit 123 may perform a logic operation betweenthe buffer signals CA1_B˜CA6_B, thereby outputting a plurality of inputsignals MT0˜MT9. The input combination circuit 123 may include, forexample but not limited to, a plurality of exclusive-OR (XOR) gates.Here, the XOR gate XOR1 may perform an XOR operation between the buffersignals CA2_B and CA3_B. The XOR gate XOR2 may perform an XOR operationbetween an output signal of the XOR gate XOR1 and the buffer signalCA1_B, thereby outputting the input signal MT0. The XOR gate XOR3 mayperform an XOR operation between the buffer signals CA5_B and CA6_B. TheXOR gate XOR4 may perform an XOR operation between an output signal ofthe XOR gate XOR3 and the buffer signal CA4_B, thereby outputting theinput signal MT1. Likewise, the input combination circuit 123 maygenerate the remaining input signals MT2˜MT9 by a combination of thecommand addresses CA7˜CA27. The input combination circuit 123 maygenerate the plurality of input signals MT0˜MT9 by a combination of theabove-mentioned XOR gates.

Only two input signals MT0 and MT1 are illustrated in an embodiment ofFIG. 2. However, an embodiment of the present disclosure assumes that 10input signals (i.e., input signals MT0˜MT9) are transferred from theinput circuit 120 to the output circuit 130. In addition, an embodimentof the present disclosure has, for example, disclosed that the inputcombination circuit 123 is composed of an XOR gate for convenience ofdescription and better understanding of the present disclosure. However,the scope or spirit of the present disclosure is not limited thereto,and it should be noted that the input combination circuit 123 may alsobe composed of another logic circuit or other logic circuits.

The output circuit 130 may include an output combination circuit 131, anoutput selection circuit 132, a selection signal generation circuit 133,and an output pad circuit 134.

For example, the output combination circuit 131 may perform a logicoperation between the internal test enable signal ITEN and the pluralityof input signals MT0˜MT9 received from the input circuit 120. The outputcombination circuit 131 may include, for example but not limited to, XORoperators, AND operators, and inversion operators to perform logicoperations between the internal test enable signal ITEN and theplurality of input signals MT0˜MT9. In an embodiment, the outputcombination circuit 131 may include, for example but not limited to, aplurality of XOR gates XOR5˜XOR10, a plurality of AND gates AND1 andAND2, and a plurality of inverters IV1 and IV2 to perform a logicoperation between the internal test enable signal ITEN and the pluralityof input signals MT0˜MT9. An embodiment of the present disclosure maynot use specific input signals MT8 and MT9 from among the plurality ofinput signals MT0˜MT9 according to the specifications of thesemiconductor device. Therefore, in order to selectively enable thespecific input signals MT8 and MT9, an inverted internal test enablesignal ITEN may be input to the AND gates AND1 and AND2.

The AND gate AND1 may perform a logic AND operation between the inputsignal MT8 and the internal test enable signal ITEN inverted by theinverter IV1. The XOR gate XOR5 may perform a logic XOR operationbetween the input signals MT0 and MT1. The XOR gate XOR6 may perform alogic XOR operation between the output signal of the XOR gate XOR5 andthe output signal of the AND gate AND1. The XOR gate XOR7 may perform alogic XOR operation between the input signals MT2 and MT3.

The AND gate AND2 may perform a logic AND operation between the inputsignal MT9 and the internal test enable signal ITEN inverted by theinverter IV2. The XOR gate XOR8 may perform a logic XOR operationbetween the input signals MT4 and MT5. The XOR gate XOR9 may perform alogic XOR operation between the output signal of the XOR gate XOR8 andthe output signal of the AND gate AND2. The XOR gate XOR10 may perform alogic XOR operation between the input signals MT6 and MT7.

An embodiment of the present disclosure has, for example, disclosed thatthe output combination circuit 131 is composed of a combination of XORgates and AND gates for convenience of description and betterunderstanding of the present disclosure. However, the scope or spirit ofthe present disclosure is not limited thereto, and it should be notedthat the output combination circuit 131 may also be composed of otherlogic circuits.

The output selection circuit 132 may select any one of the test signalsCT0˜CT3 corresponding to the output signals of the output combinationcircuit 131 and any one of the internal data MREG0˜MREG3 according tothe selection signal SEL1, and may thus output the selected result asread data GMRD0˜GMRD3.

The output selection circuit 132 may include, for example but notlimited to, an OR gate OR1 and a plurality of selection circuits M1˜M8.For example, each of the selection circuits M1˜M8 may include amultiplexer MUX.

The OR gate OR1 may perform a logic OR operation between an inversionsignal of the internal test enable signal ITEN and a data width controlsignal X4. In this case, the data width control signal X4 may be used tocontrol the amplitude of input/output (I/O) data bits. The data widthcontrol signal X4 may include bonding information of the package.Although an embodiment of the present disclosure has, for example,disclosed that the data width control signal is denoted by X4 forconvenience of description and better understanding of the presentdisclosure, the scope or spirit of the present disclosure is not limitedthereto, and the data width control signal may also be set to a specificdata width, for example, X8, X16, X32, or the like.

The plurality of selection circuits M1˜M8 may include selection circuitsM1˜M4 of a first group and selection circuits M5˜M8 of a second group.In this case, the selection circuits M1˜M4 of the first group may decidewhether to select 4 input signals MT0˜MT3 in response to the outputsignal of the OR gate OR1, or may decide whether to select a combinationsignal of 8 input signals MT0˜MT7 (where the input signals MT8 and MT9assume an unused case). The selection circuits M5˜M8 of the second groupmay decide whether to select the output signals of the selectioncircuits M1˜M4 of the first group, or may decide whether to selectinternal data MREG0˜MREG3 of the semiconductor device 100.

The selection circuits M1˜M4 of the first group may select any one ofthe output signals of the XOR gates XOR6, XOR7, XOR9, and XOR10 and anyone of the input signals MT0˜MT3 in response to the output signal of theOR gate OR1, thereby outputting test signals CT0˜CT3.

For example, if the internal test enable signal ITEN is at a logic lowlevel, the output signal of the inverter IV1 may be activated to a highlevel. The output combination circuit 131 may output 4 signals to theselection circuits M1˜M4 of the first group by combining all the inputsignals MT0˜MT9. If the output signal of the inverter IV1 is activated,the selection circuits M1˜M4 of the first group may select the outputsignals of the XOR gates XOR6, XOR7, XOR9, and XOR10 obtained bycombination of all the input signals MT0˜MT9, thereby outputting testsignals CT0˜CT3. In contrast, when the data width control signal X4 isactivated, the selection circuits M1˜M4 of the first group may selectthe input signals MT0˜MT3, thereby outputting the test signals CT0˜CT3.

For example, if output data has 4 bits, the data width control signal X4is activated such that only 4 input signals MT0˜MT3 are selected. If thedata width control signal is denoted by X8, the number of data DQ is 8.Since an embodiment of the present disclosure assumes that the datawidth control signal is denoted by X4, 4 data DQ0˜DQ3 are outputaccording to the internal test enable signal ITEN irrespective ofpackage bonding.

The selection circuits M5˜M8 of the second group may select any one ofthe test signals CT0˜CT3 and any one of internal data MREG0˜MREG3 inresponse to a selection signal SEL1. The selection circuits M5˜M8 of thesecond group may output read data GMRD0˜GMRD3 to the output pad circuit134 through a global line.

For example, if the selection signal SEL1 is at a logic high level, theselection circuits M5˜M8 of the second group may select the test signalsCT0˜CT3, thereby outputting read data GMRD0˜GMRD3. For example, if theselection signal SEL1 is at a logic low level, the selection circuitsM5˜M8 of the second group may select internal data MREG0˜MREG3 used in anormal operation, thereby outputting read data GMRD0˜GMRD3. In otherwords, if the selection signal SEL1 is deactivated during a test periodin which the internal test enable signal ITEN is activated, the testresult of the semiconductor device 100 is not output to the test device200.

The selection signal generation circuit 133 may combine the chipselection signal CS received from the pad P1 and the enable signal EN,thereby generating the selection signal SEL1. If the chip selectionsignal CS is activated to a low level and the enable signal EN isactivated to a high level, the selection signal generation circuit 133may activate the selection signal SEL1. The selection signal generationcircuit 133 may include, for example but not limited to, an inverter IV3and an AND gate AND3. The AND gate AND3 may perform a logic ANDoperation between the chip selection signal CS inverted by the inverterIV3 and the enable signal EN, thereby outputting the selection signalSEL1.

The output pad circuit 134 may include a plurality of pads P3˜P6configured to transmit read data GMRD0˜GMRD3 received from the outputselection circuit 132 to data pins 240 of the test device 200. The padsP7 and P8 may not be used according to specification of thesemiconductor device. The pads P7 and P8 may transmit data strobesignals DQS_t and DQS_c to the test device 200 in response to the inputsignals MT8 and MT9. However, an embodiment of the present disclosuredoes not connect the pads P7 and P8 to the pins of the test device 200according to specification of the semiconductor device. Therefore, asdescribed above, the output combination circuit 131 does not activatethe input signals MT8 and MT9 when the internal test enable signal ITENis activated.

That is, when the internal test enable signal ITEN is activated to ahigh level, the input signal MT8 is not transmitted to the rear end.That is, according to an embodiment, the data strobe signal DQS_t is notused in the test operation. Therefore, the input signal MT8 applied tothe pad P7 may not be used according to the internal test enable signalITEN.

Likewise, if the internal test enable signal ITEN is activated to a highlevel, the input signal MT9 is not transmitted to the rear end. That is,according to an embodiment, the data strobe signal DQS_c is not used inthe test operation. Accordingly, the input signal MT9 applied to the padP8 is not used according to the internal test enable signal ITEN.

If the internal test enable signal ITEN is at a logic low level, it canbe recognized that the test device 200 according to an embodiment is notused for special purposes. Therefore, the input signals MT8 and MT9 canbe used during a general test operation.

The test device 200 may not be coupled to some pins of the semiconductordevice 100 according to special purposes. As can be seen from anembodiment of FIG. 2, the pad configured to receive the test enablesignal TEN and the pads P7 and P8 configured to receive the commandaddress CA6 and the data strobe signals DQS_t and DQS_c are not coupledto the test device 200.

The test device 200 may include a test controller 210, a chip selectionpin 220, a command address pin 230, a data pin 240, and a clock pin 250.For example, the test controller 210 may generate a command address CA(i.e. CA[0:27]), a clock signal CLK, an inverted clock signal CLKB, anda chip selection signal CS, and may receive data DQ (i.e., DQ[0:3]) asan input.

For convenience of description and better understanding of the presentdisclosure, an embodiment of the present disclosure will, for example,disclose that the number of command addresses CA[0:27] output from thetest device 200 is set to 28 and the number of data DQ[0:3] input to thetest device 200 is set to 4. That is, an embodiment of FIG. 2 assumes,for example but not limited to, that the number of command addressesCA1˜CA27 input to the semiconductor device 100 is greater than thenumber of data DQ0˜DQ3 output from the semiconductor device 100 (i.e.,the number of input pads is higher than the number of output pads).

For convenience of description and better understanding of the presentdisclosure, only 6 command addresses CA1˜CA6 are illustrated in anembodiment of the present disclosure. However, according to anembodiment of the present disclosure, the number of command addresses CAand the number of data DQ are not limited thereto, and can also bemodified in various ways without departing from the scope or spirit ofthe present disclosure.

The test controller 210 may output the chip selection signal CS throughthe chip selection pin 220. The test controller 210 may output theplurality of command addresses CA1˜CA6 through the command address pin230. The test controller 210 may receive data DQ0˜DQ3 from thesemiconductor device 100 through the data pin 250. The semiconductordevice according to an embodiment may not receive the clock signals CLKand CLKB through the clock pin 250, and may read internal data throughthe internal clock. Therefore, the clock pin 250 of the test device 200is not used in the test operation of an embodiment.

Although an embodiment of the present disclosure has, for example,disclosed that the pins 220˜250 of the test device 200 are coupled tothe pads (P1, P3˜P6, IP1˜IP6) of the semiconductor device 100 asillustrated in FIG. 2, the scope or spirit of the present disclosure isnot limited thereto, and the pins 220˜250 of the test device 200 mayalso be coupled to the pads (P1, P3˜P6, IP1˜IP6) of the semiconductordevice 100 in various ways.

The following Table 1 illustrates an output logic of data DQ0 inresponse to the command addresses CA1˜CA27. Logic values of theremaining command addresses CA7˜CA24 not illustrated in Table 1 willherein be omitted for convenience of description.

TABLE 1 DQ0 If the number of ‘1’s is an odd number, “1” is decided. Ifthe number of ‘1’s is an even number, CA1 CA2 CA3 CA4 CA5 CA6 CA25 CA26CA27 “0” is MT0 MT1 MT8 decided. 1 1 1 1 1 0 1 1 1 0 0 0 0 0 0 0 0 0 0 00 0 0 0 0 0 0 0 1 1 0 0 0 0 0 0 0 1 0 1 0 0 0 0 0 0 1 0 0 1 0 0 0 0 1 00 0 0 1 0 0 0 1 0 0 0 0 0 1 0 0 1 0 0 0 0 0 0 1 0 1 0 0 0 0 0 0 0 1 1 00 0 0 0 0 0 0 1

If the number of command addresses CA1˜CA27 input to the semiconductordevice 100 is higher than the number of data DQ0˜DQ3 output from thesemiconductor device 100, or if each of the input signals is 1 or 0, alimited number of input patterns may be used.

In this case, there is a high possibility of false pass in which,although a failed state occurs because a specific pin is failed or manymore pins are failed, the failed state is misunderstood as a pass state.Therefore, during the test operation, there is a need to change apattern combination of input signals in various ways. For this purpose,according to an embodiment, the number of bits of the input signals MT0,MT1, and MT8 is changed such that the patterns of input signals arechanged as illustrated in Table 1.

The test device 200 recognizes output data DQ0. If the number of ‘1’s isan odd number, data is determined to be “1”. If the number of ‘1’s is aneven number, data is determined to be zero “0”. That is, when thepatterns of the input signals MT0, MT1, and MT8 are changed asillustrated in Table 1, an expectation value of data DQ0 may be outputas “0” or “1”. An embodiment of the present disclosure assumes that thecommand address CA6 is not used, such that a “Don't care” state having alogic state “0” occurs.

If each bit of the input signals MT0, MT1, and MT8 is set to “1” or “0”,there is a high possibility of false pass, such that an expectationvalue of data DQ0 is output as a logic state “0”. In addition, logicvalues of the command addresses (e.g., CA1˜CA5, CA25˜CA27) are changedto a bit value “1” one by one, such that output data DQ can bediscriminated. As described above, the test device 200 may sequentiallyinput the input patterns of the input command addresses CA1˜CA6 andCA25˜CA27 illustrated in Table 1. The test device 200 may compare dataDQ0 with the expectation value of the data DQ0 as illustrated inTable 1. Therefore, the test device 200 may determine whether the padcorresponding to the command addresses CA1˜CA6 or CA25˜CA27 of thesemiconductor device 100 is normally coupled to the internal circuit ofthe semiconductor device 100.

FIG. 3 is a circuit diagram illustrating a representation of the enablecontroller 110 illustrated in FIG. 2.

Referring to FIG. 3, the enable controller 110 may include a boot-upcontroller 111, a latch circuit 112, a test signal input circuit 113, anenable signal output circuit 114, and a pull-up driving circuit 115.

The enable controller 110 may generate the enable signal EN foractivating the open/short (OS) test operation using the boot-up enablesignal BEN activated in an initial operation of the semiconductordevice.

If the boot-up enable signal BEN is activated during the boot-upoperation, the boot-up controller 111 may activate a boot-up signal BUP.In this case, the boot-up enable signal BEN may be enabled afterdeactivation of a power-up signal PWR during the initial operation ofthe semiconductor device 100. The boot-up enable signal BEN may begenerated in the semiconductor device 100 in response to the power-upsignal PWR.

The boot-up signal BUP may update repair information of row and columnaddresses programmed in a fuse of the semiconductor device 100. During aboot-up time interval, circuits contained in a peripheral region of thesemiconductor device 100 may not perform special operations.

The latch circuit 112 is coupled to the pad P2, such that the latchcircuit 112 can latch a logic level of an output terminal of the pad P2during a predetermined time. The latch circuit 112 may include aninverter IV5 and an NMOS transistor NM1 acting as a pull-up drivingcircuit. The NMOS transistor NM1 may be coupled between the outputterminal of the pad P2 and a ground voltage terminal, such that the NMOStransistor NM1 may receive an output signal of the inverter IV5 througha gate terminal. In an embodiment of the present disclosure, since thepad P2 is in a non-connection state, the output terminal of the pad P2is pulled down to a ground voltage (VSS) level when the NMOS transistorNM1 is turned on.

The test signal input circuit 113 may combine the test mode signal TMand the boot-up signal BUP, thereby generating the internal test enablesignal ITEN. The test signal input circuit 113 may include an inverterIV4 and a NAND gate ND1. The NAND gate ND1 may perform a logic NANDoperation between the test mode signal TM inverted by the inverter IV4and the boot-up signal BUP, thereby outputting the internal test enablesignal ITEN.

The enable signal output circuit 114 may combine the output signal ofthe latch circuit 112 and the internal test enable signal ITEN, therebyoutputting the enable signal EN. The enable signal output circuit 114may include a NAND gate ND2 that outputs the enable signal EN byperforming a logic NAND operation between the output signal of the latchcircuit 112 and the internal test enable signal ITEN.

The pull-up driving circuit 115 may include a PMOS transistor PM1 thatis coupled between a power-supply voltage (VDD) input terminal and anoutput terminal of the latch circuit 112 to receive the power-up signalPWR through a gate terminal thereof. Prior to execution of the initialpower-up operation of the semiconductor device 100, the power-up signalPWR of the pull-up driving circuit 115 is at a logic low level, suchthat the output terminal of the latch circuit 112 is pulled up to thepower-supply voltage (VDD) level by the pull-up driving circuit 115. Ifthe power-up signal PWR is at a logic high level during the initialpower-up operation, the PMOS transistor PM1 of the pull-up drivingcircuit 115 is turned off.

If the enable controller 110 is applied to specification indicatingconnection between the test device 200 and the pad P2, the enablecontroller 110 may generate the enable signal EN according to the testenable signal TEN. If the test device 200 is not coupled to the pad P2as illustrated in an embodiment, the enable controller 110 may generatethe enable signal EN according to the test mode signal TM and theboot-up enable signal BEN.

An additional pad P2 configured to receive the test enable signal TENaccording to specification of the semiconductor device 100 may beincluded in the enable controller 110. However, the number of pins usedin the test device 200 for special purposes needs to be minimized, suchthat some pins of the test device 200 are in a non-connection state. Ifthe pad P2 configured to receive the test enable signal TEN is in anon-connection state, it may be impossible to enter a mode for testingconnectivity of the semiconductor device 100.

However, irrespective of connection or non-connection of the pad P2, theenable controller 110 may generate the internal test enable signal ITENby which the semiconductor device enters the test mode in response tothe boot-up enable signal BEN. Therefore, the self-open/short (OS) testcan be performed in the semiconductor device of an embodiment, such thatuniversal testing can also be performed in various kinds of manufacturedproducts.

FIG. 4 is a circuit diagram illustrating the buffer circuit 122illustrated in FIG. 2.

An embodiment of FIG. 4 will, for example, disclose a first buffer B1and the last buffer B6 from among the plurality of buffers B1˜B6. Thefirst buffer B1 and the remaining buffers B2˜B5 are identical instructure to each other, and, as such, a description of the remainingbuffers B2˜B5 will herein be omitted.

The buffer B1 may include a command buffer BUF1, a NAND gate ND4, and aninverter IV7. The command buffer BUF1 may buffer the command addressCA1. The NAND gate ND4 may perform a logic NAND operation between theenable signal EN and the output signal of the command buffer BUF1. Theinverter IV7 may output the buffer signal CA1_B by inverting the outputsignal of the NAND gate ND4.

The buffer B6 may include a command buffer BUF2, AND gates AND4 andAND5, a NAND gate ND3, and an inverter IV8. The command buffer BUF2 maybuffer the command address CA6. The AND gate AND4 may perform a logicAND operation between the enable signal EN and the output signal of thecommand buffer BUF2. The AND gate AND5 may perform a logic AND operationbetween the test mode signal TM and the internal test enable signalITEN. The NAND gate ND3 may perform a logic NAND operation between theoutput signals of the AND gates AND4 and AND5. The inverter IV8 mayoutput the buffer signal CA6_B by inverting the output signal of theNAND gate ND3.

As can be seen from FIG. 4, when the enable signal EN is activated, thebuffer B1 may buffer the command address CA1 and thus output the buffersignal CA1_B. However, only when the enable signal EN, the test modesignal TM, and the internal test enable signal ITEN are activated, thelast buffer B6 may activate the buffer signal CA6_B. If the buffer B6 isnot used, the test mode signal TM and the internal test enable signalITEN are at a logic low level, such that the buffer signal CA6_B can befixed to a logic low level, resulting in reduction in the possibility ofcausing one or more failed parts caused by external noise or the like.

As described above, an embodiment of the present disclosure may receivetest signals from the respective pins 220˜240 of the test device 200 totest the open or short state of respective pads (P1, P3˜P6) contained inthe semiconductor device 100. The semiconductor device 100 may receivethe test signal from the test device 200 through the input circuit 120,and the test device 200 may receive the output signal from the outputcircuit 130 of the semiconductor device 100. The test controller 210 ofthe test device 200 may analyze whether a signal received from thesemiconductor device 100 is normally output, such that the testcontroller 210 may determine connectivity of the respective pads (P1,P3˜P6) contained in the semiconductor device.

FIG. 5 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

Referring to FIG. 5, the system including the semiconductor device mayinclude a semiconductor device 300 and a test device 400.

The semiconductor device 300 may include an enable controller 310, aninput circuit 320, and an output circuit 330.

The enable controller 310 may generate the enable signal EN forperforming a test operation of the semiconductor device 300 in responseto the test mode signal TM and the boot-up enable signal BEN. The enablesignal EN may test connectivity of each pad. That is, the enable signalEN may test the open or short state of each pad.

The input circuit 320 may receive a signal received from the test device400, and may output the received signal to the semiconductor device 300.The input circuit 320 may generate the plurality of input signals CAn_Band the clock signals CLK_B and CLKB_B in response to the enable signalEN, the plurality of command addresses CA and the clock signals CLK andCLKB received from the test device 400. The plurality of commandaddresses CA, the clock signals CLK and CLKB, and the chip selectionsignal CA may be received from the test device 400.

The output circuit 330 may select any one of a signal received from theinput circuit 320 and internal data of the semiconductor device 300, andmay output the selected one to the test device 400 or an outside whichis physically located outside the semiconductor device 300. That is, theoutput circuit 330 may output internal data to the test device 400during the normal operation, and may output the input signal CAn_B andthe clock signals CLK_B and CLKB_B received from the input circuit 320to the test device 400 during the test operation.

The output circuit 330 may select any one of internal data of thesemiconductor device 300 and a plurality of input signals, or may selectany one of internal data of the semiconductor device 300 and the clocksignals CLK_B and CLKB_B, thereby generating plural data DQ. When thechip selection signal CS and the enable signal EN are activated, theoutput circuit 330 may select any one of internal data of thesemiconductor device 300 and the plurality of input signals CAn_B,thereby generating data strobe signals DQS_t and DQS_c.

When the chip selection signal CS and the enable signal EN areactivated, the output circuit 330 may output data DQ and the data strobesignals DQS_t and DQS_c to the test device 400. The data DQ and the datastrobe signals DQS_t and DQS_c may be output to the test device 400 inparallel.

In order to test a pad connection state of the semiconductor device 300,the test device 400 may generate the command address CA, the clocksignals CLK and CLKB, and the chip selection signal CS, may output thegenerated signals to the semiconductor device 300, and may receive dataDQ and the data strobe signals DQS_t and DQS_c from the semiconductordevice 300. The test device 400 may recognize the output signal of theoutput circuit 300, and may thus test whether or not the input signal isnormally output.

FIG. 6 is a circuit diagram illustrating a representation of an exampleof the system including the semiconductor device illustrated in FIG. 5.

Referring to FIG. 6, in order to activate the test operation of padconnectivity of the semiconductor device 300, the enable controller 310may generate the enable signal EN according to the test mode signal TMand the boot-up enable signal BEN.

The input circuit 320 may include a pad P10, an input pad circuit 321,and a buffer circuit 322.

The pad P10 may receive the chip selection signal CS as an input. Thechip selection signal CS may be received from the chip selection pin 420of the test device 400.

The input pad circuit 321 may include a plurality of input padsIP10˜IP17 configured to output a plurality of command addresses CA0˜CA5and the clock signals CLK and CLKB received from the test device 400 tothe buffer circuit 322. Here, the plurality of command addresses CA0˜CA5may be received from the command address pin 440 of the test device 400.The clock signals CLK and CLKB may be received from the clock pin 430 ofthe test device 400. The plurality of command addresses CA0˜CA5 may beinput to the semiconductor device 400 in parallel.

The buffer circuit 322 may include a plurality of buffers B10˜-B17configured to buffer the command addresses CA0˜CA5 and the clock signalsCLK and CLKB received from the input pad circuit 321. If the enablesignal EN is activated, the plurality of buffers B10 and B11 may bufferthe clock signals CLK and CLKB received from the clock pin 430 of thetest device 400, thereby outputting the clock signals CLK_B and CLKB_B.If the enable signal EN is activated, the plurality of buffers B12˜B17may buffer the plurality of command addresses CA0˜CA5 received from thecommand address pin 440, thereby outputting the plurality of inputsignals CA0_B˜CA5_B.

The output circuit 330 may include an output combination circuit 331, anoutput selection circuit 332, a selection signal generation circuit 333,and an output pad circuit 334.

The output combination circuit 331 may include, for example but notlimited to, a plurality of XOR gates XOR11˜XOR14 configured to perform alogic operation among the plurality of input signals CA0_B˜CA5_Breceived from the input circuit 320.

The XOR gate XOR11 may perform a logic XOR operation between the inputsignals CA4_B and CA5_B. The XOR gate XOR12 may perform a logic XORoperation between the output signal of the XOR gate XOR11 and the inputsignal CA3_B. The XOR gate XOR13 may perform a logic XOR operationbetween the input signals CA1_B and CA2_B. The XOR gate XOR14 mayperform a logic XOR operation between the output signal of the XOR gateXOR13 and the input signal CA0_B.

An embodiment of the present disclosure has, for example, disclosed thatthe output combination circuit 331 is composed of an XOR gate forconvenience of description and better understanding of the presentdisclosure. However, the scope or spirit of the present disclosure isnot limited thereto, and it should be noted that the output combinationcircuit 331 may also be composed of other logic circuits as necessary.

The output selection circuit 332 may select any one of the output signalof the output combination circuit 331 and the internal data according toa selection signal SEL2, and may thus output the selected one. Theoutput selection circuit 332 may select any one of the output signal ofthe buffer circuit 322 and the internal data according to the selectionsignal SEL2, and may thus output the selected one. That is, the outputselection circuit may select the output signal of the buffer circuit 322during the test operation, and may select the internal data during thenormal operation.

The output selection circuit 332 may include a plurality of selectioncircuits M10˜M19. In this case, each of the selection circuits M10˜M19may include, for example but not limited to, a multiplexer MUX.

The plurality of selection circuits M10˜M19 may include selectioncircuits M10˜M17 of the first group and selection circuits M18 and M19of the second group. If the selection signal SEL2 is activated, theselection circuits M10˜M17 of the first group may select the outputsignal of the buffer circuit 322 and the internal data of thesemiconductor device 300, thereby outputting data DQ0˜DQ7. If theselection circuit SEL2 is activated, the selection circuits M18 and M19of the second group may select the output signal of the outputcombination circuit 331 from among the output signal of the outputcombination circuit 331 and the internal data of the semiconductordevice 300, and may output the data strobe signals DQS_t and DQS_c.

The selection signal generation circuit 333 may combine the chipselection signal CS received from the pad P10 and the enable signal EN,and may thus generate the selection signal SEL2. If the chip selectionsignal CS is activated to a low level and the enable signal EN isactivated to a high level, the selection signal generation circuit 333may activate the selection signal SEL2. The selection signal generationcircuit 333 may include, for example but not limited to, an inverter IV9and an AND gate AND6. The AND gate AND6 may perform a logic ANDoperation between the chip selection signal CS inverted by the inverterIV9 and the enable signal EN, thereby outputting the selection signalSEL2.

The output pad circuit 334 may include a plurality of pads P11˜P20configured to transmit data DQ0˜DQ7 and data strobe signals DQS_t andDQS_c received from the output selection circuit 332 to the data pin 460and the data strobe pin 450 of the test device 400. That is, the padsP11 and P12 may transmit the data strobe signals DQS_t and DQS_c to thetest device 400 in response to the input signals CA0_B˜CA5_B. The padsP13˜P20 may transmit data DQ0˜DQ7 to the test device 400 in response tothe input signals CA0_B˜CA5_B and the clock signals CLK_B and CLKB_B.

The test device 400 may be a device for testing a pad connection stateof the semiconductor device 300. The test device 400 may include a testcontroller 410, a chip selection pin 420, a clock pin 430, a commandaddress pin 440, a data strobe pin 450, and a data pin 460.

The test controller 410 may generate the command address CA, the clocksignal CLK, the inverted clock signal CLKB, and the chip selectionsignal CS, and may receive the data DQ and the data strobe signals DQS_tand DQS_c. For convenience of description and better understanding ofthe present disclosure, an embodiment of the present disclosure assumesthat the number of command addresses CA[0:5] output from the test device400 is set to 6 and the number of data DQ[0:7] input to the test device400 is set to 8. However, the number of command addresses CA and thenumber of data DQ are not limited thereto, and can also be modified invarious ways without departing from the scope or spirit of the presentdisclosure.

The test controller 410 may output the chip selection signal CS throughthe chip selection pin 420. The test controller 410 may output the clocksignals CLK and CLKB through the clock pin 430. The test controller 410may output the plurality of command addresses CA0˜CA5 through thecommand address pin 440. The test controller 410 may receive dataDQ0˜DQ7 from the semiconductor device 300 through the data pin 460. Thetest controller 410 may receive the data strobe signals DQS_t and DQS_cfrom the semiconductor device through the data strobe pin 450.

It is assumed that an embodiment of FIG. 6 can be applied to an exampleof a case in which the number of command addresses CA0˜CA5 input to thesemiconductor device 300 and the number of clock signals CLK and CLKBinput to the semiconductor device 300 are identical to the number ofdata DQ0˜DQ7 output from the semiconductor device 300 (i.e., an exampleof a case in which the number of input pads is identical to the numberof output pads). An embodiment of FIG. 6 can also be applied to theother case in which the data strobe signals DQS_t and DQS_c aregenerated by combination of the input signals CA0_B˜CA5_B.

Although an embodiment of the present disclosure has, for example,disclosed that respective pins 430˜460 of the test device 400 arecoupled to respective pads P10˜P20 and IP10˜17 of the semiconductordevice 300 as illustrated in FIG. 6, the scope or spirit of the presentdisclosure is not limited thereto.

According to a specification of the semiconductor device 300 applied tomobile devices, only a manufactured product includes a pad for receivingthe test enable signal, and the remaining mobile package products do notinclude an additional pad for the test enable signal. In the case ofusing the mobile package, the number of pads used in the mobile packageis minimized to reduce product costs as well as to increase benefits ofpackage fabrication. Therefore, increasing the number of pads causesfinancial difficulty in such package fabrication. Therefore, anembodiment of the present disclosure may allow the self-test signal tobe generated from the inside of the semiconductor device 300 accordingto the boot-up enable signal BEN.

FIG. 7 is a circuit diagram illustrating a representation of the enablecontroller 310 illustrated in FIG. 6.

Referring to FIG. 7, the enable controller 310 may include a boot-upcontroller 311 and an enable signal output circuit 312.

If the boot-up enable signal BEN is activated during the boot-upoperation, the boot-up controller 311 may activate the boot-up signalBUP. The enable signal output circuit 312 may output the enable signalEN by combining the output signal of the boot-up signal BUP and the testmode signal TM.

The enable signal output circuit 312 may include, for example but notlimited to, a NAND gate ND5 and inverters IV10 and IV11. The NAND gateND5 may perform a logic NAND operation between the boot-up signal BUPand the test mode signal TM inverted by the inverter IV10. The inverterIV11 may output the enable signal EN by inverting the output signal ofthe NAND gate ND4.

FIG. 8 is a block diagram illustrating a representation of an example ofa system including a semiconductor device according to an embodiment ofthe present disclosure.

Referring to FIG. 8, if the plurality of semiconductor devices 600 and611 is composed of a modular package, the semiconductor devices 600 and611 may charge data DQ and the command address CA. The respectiveinternal circuits of the semiconductor devices 600 and 610 may beimplemented to be substantially identical to those of the embodiments ofFIGS. 1 and 2, or may be implemented to be substantially identical tothose of the embodiments of FIGS. 5 and 6.

The test device 500 may output the chip selection signals CS1 and CS2 toselect the semiconductor devices 600 and 610. In the semiconductordevices 600 and 610, the corresponding chips may be selected by the chipselection signals CS1 and CS2 independently from each other.

Therefore, if the chip selection signals CS1 and CS2 are deactivated andthe corresponding chip is not selected, data DQ is not output to thetest device 500 even when testing is performed in the semiconductordevices 600 and 610. Although the plural semiconductor devices 600 and610 are composed of a package, the chip selection signals CS1 and CS2are separated from each other, such that each chip can be independentlytested. The test device may discriminate output data DQ of the selectedchip, thereby recognizing the test result.

The following Table 2 illustrates an output logic of data DQ0 inresponse to the chip selection signals CS1 and CS2 and the commandaddresses CA1˜CA27. Logic values of the remaining command addressesCA7˜CA24 not illustrated in Table 1 will herein be omitted forconvenience of description.

TABLE 2 DQ0 If the number of ‘1’s is an odd number, “1” is decided. Ifthe number of ‘1’s is CS1 CS2 an even Semiconductor Semiconductornumber, device device CA1 CA2 CA3 CA4 CA5 CA6 CA25 CA26 CA27 “0” is(600) (610) MT0 MT1 MT8 decided. 1 0 1 1 1 1 1 0 1 1 1 0 1 0 0 0 0 0 0 00 0 0 0 1 0 0 0 0 0 0 0 0 0 1 1 1 0 0 0 0 0 0 0 0 1 0 1 1 0 0 0 0 0 0 01 0 0 1 1 0 0 0 0 0 1 0 0 0 0 1 1 0 0 0 0 1 0 0 0 0 0 1 1 0 0 0 1 0 0 00 0 0 1 1 0 0 1 0 0 0 0 0 0 0 1 0 1 1 1 1 1 1 1 1 1 1 0 0 1 0 0 0 0 0 00 0 0 0 0 1 0 0 0 0 0 0 0 0 1 1 0 1 0 0 0 0 0 0 0 1 0 1 0 1 0 0 0 0 0 01 0 0 1 0 1 0 0 0 0 1 0 0 0 0 1 0 1 0 0 0 1 0 0 0 0 0 1 0 1 0 0 1 0 0 00 0 0 1 0 1 0 1 0 0 0 0 0 0 0 1

Referring to Table 2, the semiconductor devices 600 and 610 are selectedaccording to logic levels of the chip selection signals CS1 and CS2. Forexample, if the chip selection signal CS1 is set to a logic value “1”,this means that the semiconductor device 600 is selected. If the chipselection signal CS2 is set to a logic value “1”, this means that thesemiconductor device 610 is selected.

The number of bits of the input signals MT0, MT1, and MT8 are changedsuch that a pattern of the input signals is also changed. The testdevice 500 discriminates the output data DQ0. If the number of ‘1’s isan odd number, data is determined to be “1”. If the number of ‘1’s is aneven number, data is determined to be zero “0”. That is, since themethod for discriminating a logic level of data DQ0 according to patternchange of the input signals MT0, MT1, and MT8 illustrated in Table 2 hasalready been disclosed in the above-mentioned detailed description ofTable 1, a description thereof will herein be omitted for convenience ofdescription.

FIG. 9 is a circuit diagram illustrating a representation of an exampleof the system including the semiconductor device according to anembodiment of the present disclosure.

An embodiment of FIG. 9 discloses that the semiconductor devices 830,840, and 850 are composed of a modular MCP (Multi-Chip Package) 800. Therespective internal circuits of the semiconductor devices 830, 840, and850 may be implemented to be substantially identical to those of FIGS. 1and 2, or may be implemented to be substantially identical to those ofFIGS. 5 and 6.

In the multi-chip package (MCP) 800 of an embodiment of FIG. 9, therespective semiconductor devices 830, 840, and 850 may be stacked in avertical direction. The semiconductor devices 830, 840, and 850 mayrespectively include pads 890, 891, and 892. The pads 890, 891, and 892are respectively placed on top of the semiconductor devices 830, 840,850. Although not illustrated in the drawings, the pads 890, 891, and892 respectively formed in the semiconductor devices 830, 840, and 850may refer to the input pad or the output pad illustrated in FIGS. 2 and6. The respective semiconductor devices 830, 840, and 850 may be stackedthrough an adhesive member 860. At least one of the semiconductordevices 830, 840, and 850 may be implemented as the semiconductordevices illustrated in FIGS. 1 and 2 or as the semiconductor devicesillustrated in FIGS. 5 and 6.

A pad 880 may be formed on the top surface of a main substrate 820, andat least one ball 810 may be formed at the bottom surface of the mainsubstrate 820. The MCP 800 may input/output the test signal to the testdevice 700 through the ball 810. In this case, the main substrate 820may be a Printed Circuit Board (PCB).

The pad 880 of the main substrate 820 may be electrically coupled to thepads 890, 891, and 892 respectively formed in the semiconductor devices830, 840, and 850 through a wire 900. If the test signal is receivedfrom the test device 700, the received test signal may be transmitted tothe respective pads 890, 891, and 892 through the ball 810, the pad 880of the main substrate 820, and the wire 900.

For example, the embodiments of FIGS. 1 to 8 may be used to test theopen or short state of lines encountered on a route (A). That is, theembodiments of FIGS. 1 to 8 may be used to test connectivity of linesconnected from the ball 810 of the MCP 800 to the respective pads 890,891, and 892. In an embodiment, an epoxy molding compound (EMC) 870 maycover and protect the elements of the MCP.

FIG. 10 is a timing diagram illustrating operations of a semiconductordevice according to embodiments of the present disclosure. It is assumedthat the timing diagram of FIG. 10 is applied to the semiconductordevice 100 of the embodiments illustrated in FIGS. 1 and 2.

If the power-up signal PWR is deactivated to a high level, an internalclock signal CKE of the semiconductor device 100 is generated. If aninverted reset signal RSTB is deactivated to a high level, the boot-upenable signal BEN is activated to a high level such that the boot-upoperation starts. After the boot-up operation is maintained for apredetermined time, the boot-up enable signal BEN may be deactivated toa low level.

After lapse of a predetermined time after activation of the boot-upenable signal BEN, the enable controller 110 may activate the internaltest enable signal ITEN to a logic high level. If the test mode signalTM is activated, the test mode begins. If the boot-up enable signal isdeactivated, the enable controller 110 may deactivate the internal testenable signal ITEN to a logic low level.

The chip selection signal CS is activated to a logic low level during avalid time period of the internal clock signal CKE. The input signal INmay be input through the input circuit 120 of the semiconductor device100. After lapse of a predetermined time, the output signal OUT forindicating connectivity or non-connectivity of each pad may be output tothe test device 200. The input signal IN may be any of the commandaddresses CA1˜CA6, the clock signals CLK, CLKB, etc. illustrated in theembodiments of FIGS. 2 and 4. The output signal OUT may be any of thedata strobe signals DQS_t and DQS_c, data DQ0˜DQ3, etc. illustrated inthe embodiments of FIGS. 2 and 4.

As is apparent from the above description, the embodiments of thepresent disclosure perform the open/short (OS) test of a pad at aspecific time point without using the test pad, such that a self-test ofa semiconductor device can be performed irrespective of specification ofthe semiconductor device.

Those skilled in the art will appreciate that the embodiments may becarried out in other specific ways than those set forth herein withoutdeparting from the spirit and essential characteristics of thedisclosure. The above embodiments are therefore to be construed in allaspects as illustrative and not restrictive. The scope of the disclosureshould be determined by the appended claims and their legal equivalents,not by the above description. Further, all changes coming within themeaning and equivalency range of the appended claims are intended to beembraced therein. In addition, it is obvious to those skilled in the artthat claims that are not explicitly cited in each other in the appendedclaims may be presented in combination as an embodiment or included as anew claim by a subsequent amendment after the application is filed.

Although a number of illustrative embodiments have been described, itshould be understood that numerous other modifications and embodimentscan be devised by those skilled in the art that will fall within thespirit and scope of the principles of this disclosure. Particularly,numerous variations and modifications are possible in the componentparts and/or arrangements which are within the scope of the disclosure,the drawings and the accompanying claims. In addition to variations andmodifications in the component parts and/or arrangements, alternativeuses will also be apparent to those skilled in the art.

What is claimed is:
 1. A system comprising: a plurality of input andoutput pads configured to input and output a plurality of commandaddresses and data; and a semiconductor device configured tosimultaneously receive the plurality of command addresses through theplurality of input and output pads to generate a plurality of inputsignals, and output the data by combining the plurality of input signalsduring activation of an enable signal, wherein the number of signalsoutput to the plurality of input and output pads is selectively changedbased on an internal test enable signal for testing pad connectivity,wherein the enable signal and the internal test enable signal aregenerated by a boot-up enable signal.
 2. The system according to claim1, wherein the semiconductor device includes: an enable controllerconfigured to generate the enable signal and the internal test enablesignal based on the boot-up enable signal; an input circuit configuredto generate a plurality of input signals by buffering the plurality ofcommand addresses during activation of the enable signal; and an outputcircuit configured to select one of internal data and the plurality ofinput signals received from the input circuit during activation of theenable signal, output the selected one to a test device, and blockoutput of some input signals from among the plurality of input signalsbased on the internal test enable signal.
 3. The semiconductor deviceaccording to claim 2, wherein the enable controller includes: a boot-upcontroller configured to activate a boot-up signal during a boot-upoperation based on the boot-up enable signal; a latch circuit configuredto pull-down drive an output signal of a pad receiving a test enablesignal, and latch the pull-down driven result; a test signal inputcircuit configured to generate the internal test enable signal bycombining a test mode signal and the boot-up signal; an enable signaloutput circuit configured to output the enable signal by combining anoutput signal of the latch circuit and the internal test enable signal;and a pull-up driving circuit configured to pull-up drive the outputsignal of the latch circuit during activation of a power-up signal. 4.The semiconductor device according to claim 3, wherein the pad receivingthe test enable signal and a pad receiving a data strobe signal are in anon-connection state.
 5. The semiconductor device according to claim 2,wherein the input circuit includes: an input pad circuit configured toreceive the plurality of command addresses from the outside of thesemiconductor device; a buffer circuit configured to buffer theplurality of command addresses received from the input pad circuit; aninput combination circuit configured to output the plurality of inputsignals by performing a logic operation between output signals of thebuffer circuit; and a pad configured to transmit a chip selection signalreceived from the outside of the semiconductor device to the outputcircuit.
 6. The semiconductor device according to claim 5, wherein: thebuffer circuit includes a plurality of buffers, wherein output signalsof some buffers from among the plurality of buffers are deactivated to aspecific logic level based on the test mode signal and the internal testenable signal.
 7. The semiconductor device according to claim 2, whereinthe output circuit is configured to block output of some input signalsfrom among the plurality of input signals based on the internal testenable signal.
 8. The semiconductor device according to claim 2, whereinthe output circuit includes: an output combination circuit configured toperform a logic operation between the plurality of input signals, andoutput a result of the logic operation; a selection signal generationcircuit configured to generate a selection signal by combining a chipenable signal and the enable signal; an output selection circuitconfigured to select one of an output signal of the output combinationcircuit and the internal data based on the internal test enable signaland the selection signal, and output the selected one; and an output padcircuit configured to transmit an output signal of the output selectioncircuit to the outside of the semiconductor device.
 9. The semiconductordevice according to claim 8, wherein the output combination circuit isconfigured to block an input signal corresponding to an unused pad ofthe output pad circuit during activation of the internal test enablesignal.
 10. The semiconductor device according to claim 8, wherein theoutput combination circuit includes: an AND operator configured toperform a logic AND operation between an inversion signal of theinternal test enable signal and some of the plurality of input signals;and a plurality of exclusive-OR (XOR) operators configured to perform alogic XOR operation between an output signal of the AND operator and theplurality of input signals.
 11. The semiconductor device according toclaim 8, wherein the selection signal generation circuit is configuredto activate the selection signal when the chip enable signal and theenable signal are activated.
 12. The semiconductor device according toclaim 2, wherein the number of the plurality of command addresses isgreater than the number of output data of the output circuit.